A low-temperature sol-gel Ga-doped ZnO (ZnO:Ga) thin film as the electron transport layer (ETL) for high efficiency inverted polymer solar cells (PSCs) has been realised. The ZnO:Ga precursor was prepared by dissolving zinc acetate and ethanolamine in the 2-methoxyethanol with Ga(NO3)3 at different concentration. Doped ZnO thin films were deposed on indium tin oxide (ITO)/glass substrates by spin-coating technique and the films annealed at 150°C for 5 minutes in air. To check performances of ZnO:Ga thin film were realized inverted polymer solar cells with the configuration ITO/ZnO:Ga/photoactive layer/MoO3/Ag. The photoactive layer was a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2,6-diyl-alt-(4-(2-octanoyl)-3-fluorothieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-CF) and [6,6]-phenyl C71 butyric acid methyl ester ([70]PCBM) (1:1.5 w/w). In this work was investigated the effect of gallium concentration on the photovoltaic behavior of PSCs. The best efficiency of 7.7% was reached by using a 6 at% ZnO:Ga film as ETL.
A comparative study on low-temperature sol-gel ga-doped zinc oxide inverted PSCs / Diana, R.; Panunzi, B.; Morvillo, P.; Bobeico, E.; Caruso, U.. - In: INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE. - ISSN 1452-3981. - 14:1(2019), pp. 10281-10288. [10.20964/2019.11.13]
A comparative study on low-temperature sol-gel ga-doped zinc oxide inverted PSCs
Diana R.;Panunzi B.;Caruso U.
Conceptualization
2019
Abstract
A low-temperature sol-gel Ga-doped ZnO (ZnO:Ga) thin film as the electron transport layer (ETL) for high efficiency inverted polymer solar cells (PSCs) has been realised. The ZnO:Ga precursor was prepared by dissolving zinc acetate and ethanolamine in the 2-methoxyethanol with Ga(NO3)3 at different concentration. Doped ZnO thin films were deposed on indium tin oxide (ITO)/glass substrates by spin-coating technique and the films annealed at 150°C for 5 minutes in air. To check performances of ZnO:Ga thin film were realized inverted polymer solar cells with the configuration ITO/ZnO:Ga/photoactive layer/MoO3/Ag. The photoactive layer was a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2,6-diyl-alt-(4-(2-octanoyl)-3-fluorothieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-CF) and [6,6]-phenyl C71 butyric acid methyl ester ([70]PCBM) (1:1.5 w/w). In this work was investigated the effect of gallium concentration on the photovoltaic behavior of PSCs. The best efficiency of 7.7% was reached by using a 6 at% ZnO:Ga film as ETL.File | Dimensione | Formato | |
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