Graphene oxide (GO) is a photoluminescent material whose application in integrated optoelectronics has been strongly limited due to poor emission intensity and handling procedures not compatible with standard microelectronic ones. In this work, a hybrid GO-porous silicon (GO-PSi) structure is realized in order to investigate the emission properties of GO infiltrated into an aperiodic porous multilayered matrix. A photoluminescence enhancement by a factor 32, compared to the same amount of GO deposited on a flat silicon surface, is demonstrated. Photoluminescence measurements also show wavelength modulation of the emitted signal.
Photoluminescence enhancement of graphene oxide emission by infiltration in an aperiodic porous silicon multilayer / Rea, I.; Casalino, M.; Terracciano, M.; Sansone, L.; Politi, J.; De Stefano, L.. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 24:21(2016), pp. 24413-24421. [10.1364/OE.24.024413]
Photoluminescence enhancement of graphene oxide emission by infiltration in an aperiodic porous silicon multilayer
Terracciano M.;
2016
Abstract
Graphene oxide (GO) is a photoluminescent material whose application in integrated optoelectronics has been strongly limited due to poor emission intensity and handling procedures not compatible with standard microelectronic ones. In this work, a hybrid GO-porous silicon (GO-PSi) structure is realized in order to investigate the emission properties of GO infiltrated into an aperiodic porous multilayered matrix. A photoluminescence enhancement by a factor 32, compared to the same amount of GO deposited on a flat silicon surface, is demonstrated. Photoluminescence measurements also show wavelength modulation of the emitted signal.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
