This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base dc measurements. The accuracy is numerically verified by making use of a compact model calibrated on I–V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.
Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect / D'Alessandro, Vincenzo. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 127:(2017), pp. 5-12. [10.1016/j.sse.2016.10.041]
Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect
Vincenzo d'Alessandro
2017
Abstract
This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base dc measurements. The accuracy is numerically verified by making use of a compact model calibrated on I–V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs.| File | Dimensione | Formato | |
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