By a combination of optical second harmonic generation and transport measurements, we have investigated interfaces formed by either crystalline or amorphous thin films of LaAlO3 grown on TiO2-terminated SrTiO3(001) substrates. Our approach aims at disentangling the relative role of intrinsic and extrinsic doping mechanisms in the formation of the two-dimensional electron gas. The different nature of the two mechanisms is revealed when comparing the sample response variation as a function of temperature during annealing in air. However, before the thermal treatment, the two types of interfaces show almost the same intensity of the second harmonic signal, provided the overlayer thickness is the same. As we will show, the second harmonic signal is proportional to the depth of the potential well confining the charges at the interface. Therefore, our result demonstrates that this depth is about the same for the two different material systems. This conclusion supports the idea that the electronic properties of the two-dimensional electron gas are almost independent of the doping mechanism of the quantum well.

Potential-well depth at amorphous-LaAlO3/crystalline-SrTiO3 interfaces measured by optical second harmonic generation / Gabriele De, Luca; Rubano, Andrea; DI GENNARO, Emiliano; Amit, Khare; Fabio Miletto, Granozio; SCOTTI DI UCCIO, Umberto; Marrucci, Lorenzo; Domenico, Paparo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 104:(2014), p. 261603. [10.1063/1.4886413]

Potential-well depth at amorphous-LaAlO3/crystalline-SrTiO3 interfaces measured by optical second harmonic generation

RUBANO, ANDREA;DI GENNARO, EMILIANO;SCOTTI DI UCCIO, UMBERTO;MARRUCCI, LORENZO;
2014

Abstract

By a combination of optical second harmonic generation and transport measurements, we have investigated interfaces formed by either crystalline or amorphous thin films of LaAlO3 grown on TiO2-terminated SrTiO3(001) substrates. Our approach aims at disentangling the relative role of intrinsic and extrinsic doping mechanisms in the formation of the two-dimensional electron gas. The different nature of the two mechanisms is revealed when comparing the sample response variation as a function of temperature during annealing in air. However, before the thermal treatment, the two types of interfaces show almost the same intensity of the second harmonic signal, provided the overlayer thickness is the same. As we will show, the second harmonic signal is proportional to the depth of the potential well confining the charges at the interface. Therefore, our result demonstrates that this depth is about the same for the two different material systems. This conclusion supports the idea that the electronic properties of the two-dimensional electron gas are almost independent of the doping mechanism of the quantum well.
2014
Potential-well depth at amorphous-LaAlO3/crystalline-SrTiO3 interfaces measured by optical second harmonic generation / Gabriele De, Luca; Rubano, Andrea; DI GENNARO, Emiliano; Amit, Khare; Fabio Miletto, Granozio; SCOTTI DI UCCIO, Umberto; Marrucci, Lorenzo; Domenico, Paparo. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 104:(2014), p. 261603. [10.1063/1.4886413]
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/586920
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 21
  • ???jsp.display-item.citation.isi??? 15
social impact