We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO3/SrTiO3 interface. Bridges with lateral dimensions down to 500 nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO3/SrTiO3 interface.
In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures / Stornaiuolo, Daniela; S., Gariglio; N. J., G.; A., Fete; A. D., Caviglia; G., Seyfarth; D., Jaccard; A. F., Morpurgo; J. M., Triscone. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:(2012), pp. 222601-1-222601-4. [10.1063/1.4768936]
In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures
STORNAIUOLO, DANIELA;
2012
Abstract
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO3/SrTiO3 interface. Bridges with lateral dimensions down to 500 nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO3/SrTiO3 interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
