Progress in the realization of a silicon-CNT photodetector

Aramo, C.; Ambrosio, A.; Ambrosio, M.; Castrucci, P.; Cilmo, Marco; De Crescenzi, M.; Fiandrini, E.; Guarino, Fausto; Grossi, V.; Nappi, E.; Passacantando, M.; Pignatel, G.; Santucci, S.; Scarselli, M.; Tinti, A.; Valentini, A.

doi:10.1016/j.nima.2011.12.098

The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm.

Progress in the realization of a silicon-CNT photodetector / C., Aramo; A., Ambrosio; M., Ambrosio; P., Castrucci; Cilmo, Marco; M., De Crescenzi; E., Fiandrini; Guarino, Fausto; V., Grossi; E., Nappi; M., Passacantando; G., Pignatel; S., Santucci; M., Scarselli; A., Tinti; A., Valentini. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 695:(2012), pp. 150-153. [10.1016/j.nima.2011.12.098]