Light-induced metastable defects in undoped a-Si:H: midgap density of states determination by capacitance, photothermal deflection spectroscopy and photoconductivity measurements / K., Z., U., B.V., Coscia, U., P., M., E., T., P. Roca I., C., D., M., P., A.. - STAMPA. - (1988), pp. 766-770. (8th European Photovoltaic Solar Energy Conference Florence ( Italy) 9-13 May 1988).

Light-induced metastable defects in undoped a-Si:H: midgap density of states determination by capacitance, photothermal deflection spectroscopy and photoconductivity measurements

COSCIA, UBALDO;
1988

1988
9027728151
Light-induced metastable defects in undoped a-Si:H: midgap density of states determination by capacitance, photothermal deflection spectroscopy and photoconductivity measurements / K., Z., U., B.V., Coscia, U., P., M., E., T., P. Roca I., C., D., M., P., A.. - STAMPA. - (1988), pp. 766-770. (8th European Photovoltaic Solar Energy Conference Florence ( Italy) 9-13 May 1988).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/487081
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