A new fabrication process is presented to make Nb/Al/AlOx/Nb superconducting tunnel junctions with ultralow subgap leakage current at low temperatures below 4.2 K for X-ray detection. A Nb anodization process has been adopted to make electric insulation at the periphery of an ultrathin AIOx tunnel barrier through use in combination with the conventional SiO self-aligned insulation process. The temperature dependence of the subgap current of the junctions fabricated by the present process is in good agreement with that predicted by the Bardeen-Cooper-Schrieffer (BCS) theory, while junctions made by the conventional process show a weak temperature dependence of the subgap current. In addition, the Vm value of the junction fabricated by the present process was found to be more than 3000 mV at 1.2 K. It has been clarified that the anodization process introduces improvements to make the subgap leakage current extremely small in the temperature range from 4.2 K down to 1.2 K.
A New Fabrication Process of Superconducting Nb Tunnel-junctions With Ultralow Leakage Current For X-ray-detection / H., Nakagawa; Pepe, GIOVANNI PIERO; H., Akoh; L., Frunzio; R., Cristiano; E., Esposito; S., Pagano; Peluso, Giuseppe; A., Barone; S., Takada. - In: JAPANESE JOURNAL OF APPLIED PHYSICS. - ISSN 0021-4922. - STAMPA. - 32:(1993), pp. 4535-4537. [10.1143/JJAP.32.4535]
A New Fabrication Process of Superconducting Nb Tunnel-junctions With Ultralow Leakage Current For X-ray-detection
PEPE, GIOVANNI PIERO;PELUSO, GIUSEPPE;
1993
Abstract
A new fabrication process is presented to make Nb/Al/AlOx/Nb superconducting tunnel junctions with ultralow subgap leakage current at low temperatures below 4.2 K for X-ray detection. A Nb anodization process has been adopted to make electric insulation at the periphery of an ultrathin AIOx tunnel barrier through use in combination with the conventional SiO self-aligned insulation process. The temperature dependence of the subgap current of the junctions fabricated by the present process is in good agreement with that predicted by the Bardeen-Cooper-Schrieffer (BCS) theory, while junctions made by the conventional process show a weak temperature dependence of the subgap current. In addition, the Vm value of the junction fabricated by the present process was found to be more than 3000 mV at 1.2 K. It has been clarified that the anodization process introduces improvements to make the subgap leakage current extremely small in the temperature range from 4.2 K down to 1.2 K.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
