The use of a double side μ-strip silicon crystal for X-ray detection is investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector is irradiated by 241Am and 109Cd sources. Different zones within the 100-μm read-out pitch are individually exposed. The following characteristics are studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector is measured at three energy values.
Characterization of the response of a double side mu -strip silicon detector to X-rays in the diagnostic energy range / A., Bandettini; W., Bencivelli; E., Bertolucci; U., Bottigli; M., Conti; A., Del Guerra; M. E., Fantacci; P., Randaccio; V., Rosso; Russo, Paolo; A., Stefanini. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 40:(1993), pp. 983-986. [10.1109/23.256697]
Characterization of the response of a double side mu -strip silicon detector to X-rays in the diagnostic energy range
RUSSO, PAOLO;
1993
Abstract
The use of a double side μ-strip silicon crystal for X-ray detection is investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector is irradiated by 241Am and 109Cd sources. Different zones within the 100-μm read-out pitch are individually exposed. The following characteristics are studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector is measured at three energy values.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
