We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2×10×103 mm irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R
Imaging performance of single-element CdZnTe detectors for digital radiography / E., Bertolucci; P., Chirco; M., Conti; L., Marcello; M., Rossi; Russo, Paolo. - STAMPA. - 1:(1997), pp. 546-550. (Intervento presentato al convegno 1997 IEEE Nuclear Science Symposium Conference Record tenutosi a Albuquerque, NM, USA nel 9-15/11/1997) [10.1109/NSSMIC.1997.672642].
Imaging performance of single-element CdZnTe detectors for digital radiography
RUSSO, PAOLO
1997
Abstract
We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2×10×103 mm irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.RI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
