Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage even if the impurity concentration of the lightly n-doped region is increased from 2*10/sup 13/ to 2*10/sup 14/ cm/sup -3/. The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltage
Effects of epitaxial doping on current characteristics in power BMFETs / G. V., Persiano; Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - STAMPA. - 2:(1993), pp. 40-45. (Intervento presentato al convegno Proceedings of the 5th European Conference on Power Electronics and Applications tenutosi a Brighton, UK nel 1993).
Effects of epitaxial doping on current characteristics in power BMFETs
STROLLO, ANTONIO GIUSEPPE MARIA;
1993
Abstract
Two-dimensional numerical simulation is used to investigate the influence of the epilayer doping on both static and dynamic characteristics of power BMFETs. The numerical analysis shows that, by allowing a partial overlap of the gate diffusions under the source, it is possible to realize normally-off devices with sustaining voltage limited only by the gate-drain breakdown voltage even if the impurity concentration of the lightly n-doped region is increased from 2*10/sup 13/ to 2*10/sup 14/ cm/sup -3/. The BMFETs with larger epilayer doping exhibit higher DC current gain, substantially improved turn-on and turn-off transient behaviours, and a slight reduction in the breakdown voltageI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
