By reducing the distance of the gate diffusions in a vertical channel JFET (junction field effect transistor) device it is possible to continuously change from a BMFET to a standard BJT (bipolar junction transistor) structure. The static characteristics of this class of normally off devices are investigated using 2D numerical simulation. It is shown that a partial overlap of the gate diffusions is a simple means to obtain a normally off structure with high blocking voltage. A comparative analysis with a standard power BJT indicates that the BMFET has larger current gain, does not suffer from current crowding phenomena, and has lower saturation voltage.
Power bipolar-mode JFET (BMFET) versus BJT: A comparative analysis / G., Persiano; Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - STAMPA. - (1991), pp. 1451-1455. (Intervento presentato al convegno 1991 IEEE Industry Application Society Annual Meeting tenutosi a Dearbon, USA nel Oct. 1991) [10.1109/IAS.1991.178051].
Power bipolar-mode JFET (BMFET) versus BJT: A comparative analysis
STROLLO, ANTONIO GIUSEPPE MARIA;
1991
Abstract
By reducing the distance of the gate diffusions in a vertical channel JFET (junction field effect transistor) device it is possible to continuously change from a BMFET to a standard BJT (bipolar junction transistor) structure. The static characteristics of this class of normally off devices are investigated using 2D numerical simulation. It is shown that a partial overlap of the gate diffusions is a simple means to obtain a normally off structure with high blocking voltage. A comparative analysis with a standard power BJT indicates that the BMFET has larger current gain, does not suffer from current crowding phenomena, and has lower saturation voltage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
