On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical model is developed for the output I-V characteristics of a static induction transistor (SIT). The model is able to explain the output I-V curves from the exponential shape in the low-current range to the triodelike I-V curve shape and linear behavior in the high-current range. The comprehensive analytical model obtained gives results that are in very good agreement with the numerical simulations and can be used to assess the influence of the various geometrical and physical parameters on the performance of the device.
A two-dimensional analytical model for the output I-V characteristics of the static induction transistor (SIT) / Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - STAMPA. - (1990), pp. 196-203. ( Proc. of the IPEC Conference Tokyo May 1990) [10.1109/ISPSD.1990.991083].
A two-dimensional analytical model for the output I-V characteristics of the static induction transistor (SIT)
STROLLO, ANTONIO GIUSEPPE MARIA;
1990
Abstract
On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical model is developed for the output I-V characteristics of a static induction transistor (SIT). The model is able to explain the output I-V curves from the exponential shape in the low-current range to the triodelike I-V curve shape and linear behavior in the high-current range. The comprehensive analytical model obtained gives results that are in very good agreement with the numerical simulations and can be used to assess the influence of the various geometrical and physical parameters on the performance of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
