A new PSPICE subcircuit model for power PiN diodes is presented. The model is based on an equivalent circuit representation for the base region, obtained by rational approximation of Laplace transform solution of the ambipolar diffusion equation. Good agreement has been obtained by comparing the results of the proposed PIN diode model with numerical device simulations
A new PiN diode modelling approach for power electronic PSPICE simulations / Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - STAMPA. - 1:(1994), pp. 52-58. (Intervento presentato al convegno 25th Annual IEEE Power Electronics Specialists Conference, PESC '94 Record. tenutosi a Taipei, Taiwan nel 1994) [10.1109/PESC.1994.349750].
A new PiN diode modelling approach for power electronic PSPICE simulations
STROLLO, ANTONIO GIUSEPPE MARIA;
1994
Abstract
A new PSPICE subcircuit model for power PiN diodes is presented. The model is based on an equivalent circuit representation for the base region, obtained by rational approximation of Laplace transform solution of the ambipolar diffusion equation. Good agreement has been obtained by comparing the results of the proposed PIN diode model with numerical device simulationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
