We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2x10x10 mm(3) irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R..
Imaging performance of single-element CdZnTe detectors for digital radiography / Bertolucci, Ennio; P., Chirco; Conti, Maurizio; L., Marcello; M., Rossi; Russo, Paolo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 45:(1998), pp. 406-412. [10.1109/23.682417]
Imaging performance of single-element CdZnTe detectors for digital radiography
BERTOLUCCI, ENNIO;CONTI, MAURIZIO;RUSSO, PAOLO
1998
Abstract
We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detectors 2x10x10 mm(3) irradiated transverse to the electric field, in view of their possible use for digital radiography. Charge collection efficiency, energy resolution and charge collection time have been measured as a function of the bias voltage. The detector's imaging performance was evaluated, using a scanning procedure, by measurements (at 60 keV) of the line spread function and edge response function of the imaging system; metallic test objects and bone tissue were imaged. Image contrast values as low as C=10% were obtained for a minimum 5:1 S.N.R..I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
