A new model for the calculation of power diode reverse-recovery time is described. The model takes into account the effect of emitter recombination and is easily incorporated into the PSPICE simulator. Comparisons between the proposed model and numerical simulation results are presented
Calculation of power diode reverse-recovery time for SPICE simulations / Strollo, ANTONIO GIUSEPPE MARIA. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 30:(1994), pp. 1109-1110. [10.1049/el:19940770]
Calculation of power diode reverse-recovery time for SPICE simulations
STROLLO, ANTONIO GIUSEPPE MARIA
1994
Abstract
A new model for the calculation of power diode reverse-recovery time is described. The model takes into account the effect of emitter recombination and is easily incorporated into the PSPICE simulator. Comparisons between the proposed model and numerical simulation results are presentedFile in questo prodotto:
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