A new analytical model is described for the pentode-like region of the characteristics of recessed-gate SIT structures. The model allows one to investigate the transition from saturating characteristics of long channel JFET's to nonsaturating behavior of SIT devices, taking into account realistic device geometry
Modeling pentode-like characteristics of recessed-gate static induction transistor / Strollo, ANTONIO GIUSEPPE MARIA. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 41:(1994), pp. 616-617. [10.1109/16.278520]
Modeling pentode-like characteristics of recessed-gate static induction transistor
STROLLO, ANTONIO GIUSEPPE MARIA
1994
Abstract
A new analytical model is described for the pentode-like region of the characteristics of recessed-gate SIT structures. The model allows one to investigate the transition from saturating characteristics of long channel JFET's to nonsaturating behavior of SIT devices, taking into account realistic device geometryFile in questo prodotto:
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