n this paper the features of power BMFETs are presented. Characteristics in the off and on states are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFET structures halfway between standard vertical JFET and power BJTs. A comparative analysis with a standard power bipolar transistor of comparable geometry and doping shows that the new BMFET has higher current ratings at breakdown, larger current gain, does not suffer from current crowding phenomena and has lower saturation voltage.
The bipolar mode FET: a new power device combining FET with BJT operation / P., Spirito; G., Persiano; Strollo, ANTONIO GIUSEPPE MARIA. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 24:(1993), pp. 61-74. [10.1016/0026-2692(93)90102-K]
The bipolar mode FET: a new power device combining FET with BJT operation
STROLLO, ANTONIO GIUSEPPE MARIA
1993
Abstract
n this paper the features of power BMFETs are presented. Characteristics in the off and on states are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFET structures halfway between standard vertical JFET and power BJTs. A comparative analysis with a standard power bipolar transistor of comparable geometry and doping shows that the new BMFET has higher current ratings at breakdown, larger current gain, does not suffer from current crowding phenomena and has lower saturation voltage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
