An analytical model is developed for the DC characteristics of the static induction transistor (SIT). The model is based on an accurate two-dimensional solution for the potential distribution in the device and is able to explain the I-V curves of the SIT in the full range of the bias condition, with good agreement with the results of numerical simulations. The analytical model is used to study the influence of the main geometrical and physical parameters of the device on its electrical characteristics
A self-consistent model for the SIT DC characteristics / Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 38:(1991), pp. 1943-1951. [10.1109/16.119037]
A self-consistent model for the SIT DC characteristics
STROLLO, ANTONIO GIUSEPPE MARIA;
1991
Abstract
An analytical model is developed for the DC characteristics of the static induction transistor (SIT). The model is based on an accurate two-dimensional solution for the potential distribution in the device and is able to explain the I-V curves of the SIT in the full range of the bias condition, with good agreement with the results of numerical simulations. The analytical model is used to study the influence of the main geometrical and physical parameters of the device on its electrical characteristicsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
