The activation of the parasitic bipolar transistor during reverse recovery of the internal diode of a power MOSFET used as a fly-back diode in a half-bridge circuit topology is investigated. Experimental observations, obtained by means of a non-destructive tester, and 2D MEDICI simulations indicate that, among the various physical and geometrical parameters of MOSFET elementary cell, the resistance associated to the contact on the source region plays the most relevant role during the activation process.
Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode / G., Busatto; G., Persiano; Strollo, ANTONIO GIUSEPPE MARIA; P., Spirito. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 37:(1997), pp. 1507-1510. [10.1016/S0026-2714(97)00096-6]
Activation of parasitic bipolar transistor during reverse recovery of MOSFET's intrinsic diode
STROLLO, ANTONIO GIUSEPPE MARIA;
1997
Abstract
The activation of the parasitic bipolar transistor during reverse recovery of the internal diode of a power MOSFET used as a fly-back diode in a half-bridge circuit topology is investigated. Experimental observations, obtained by means of a non-destructive tester, and 2D MEDICI simulations indicate that, among the various physical and geometrical parameters of MOSFET elementary cell, the resistance associated to the contact on the source region plays the most relevant role during the activation process.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
