Intrinsic Electric Transport in CMR Thin-Films

The colossal magnetoresistance (CMR) manganese oxides, have been the subject of intense studies. To elucidate the mechanisms at work in the ferromagnetic metallic state is essential for the comprehension of the M–I transition and the associated CMR effect. We present here comparison among resistivities behavior in Ca and Sr-doped manganite films (x = 0.3) grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. At low temperatures, a dominant T 2 term in the resistivity has generally been observed. Our analysis shows that for residual resistivity values larger than a critical one, there is a substantial deviation from the T 2-like behavior and that an unusual T 2.5 one is robust. This behavior supports the theoretical proposal of single magnon scattering in the presence of minority spin states localized by the disorder. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario.