We report on sexithiophene films, about 150-nm thick, grown by thermal evaporation on single-crystal oxides and, as comparison, on Si/SiO(2). By heating the entire deposition chamber at 100A degrees C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer in height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetics is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter-island separation region size on the main charge-transport parameters.

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

ARUTA, CARMELA;BARRA, Mario;AUSANIO, GIOVANNI;CASSINESE, ANTONIO
2009

Abstract

We report on sexithiophene films, about 150-nm thick, grown by thermal evaporation on single-crystal oxides and, as comparison, on Si/SiO(2). By heating the entire deposition chamber at 100A degrees C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer in height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetics is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter-island separation region size on the main charge-transport parameters.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/363755
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