In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N_-dioctyl-3,4,9,10-perylene tetracarboxylic diimide _PTCDI-C8H_ transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.

Photoinduced long-term memory effects in n-type organic perylene transistors / Barra, M.; Bloisi, Francesco; Cassinese, Antonio; DI GIROLAMO, F. V.; Vicari, LUCIANO ROSARIO MARIA. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 106:(2009), pp. 126105-1-126105-3. [10.1063/1.3272035]

Photoinduced long-term memory effects in n-type organic perylene transistors.

BLOISI, FRANCESCO;CASSINESE, ANTONIO;VICARI, LUCIANO ROSARIO MARIA
2009

Abstract

In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N_-dioctyl-3,4,9,10-perylene tetracarboxylic diimide _PTCDI-C8H_ transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.
2009
Photoinduced long-term memory effects in n-type organic perylene transistors / Barra, M.; Bloisi, Francesco; Cassinese, Antonio; DI GIROLAMO, F. V.; Vicari, LUCIANO ROSARIO MARIA. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 106:(2009), pp. 126105-1-126105-3. [10.1063/1.3272035]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/361336
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