In this paper we study the electron-electron correlation in silicon anisotropic quantum dots. A variational approach to the problem of the quantum confinement of two electrons in an ellipsoidal quantum dot is presented. All the calculations are done as a function of the dot aspect ratio, showing how the Coulomb repulsion and dielectric effects (related to the dielectric mismatch between the dot and the surrounding medium) give rise to shape-dependent correlation effects. The energy needed to add a second electron to the ellipsoidal quantum dot is calculated and discussed as well.
Electron-electron correlation in silicon anisotropic quantum dots / G., Cantele; Ninno, Domenico; G., Iadonisi. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 197:(2003), pp. 432-435. [10.1002/pssa.200306539]
Electron-electron correlation in silicon anisotropic quantum dots
NINNO, DOMENICO;
2003
Abstract
In this paper we study the electron-electron correlation in silicon anisotropic quantum dots. A variational approach to the problem of the quantum confinement of two electrons in an ellipsoidal quantum dot is presented. All the calculations are done as a function of the dot aspect ratio, showing how the Coulomb repulsion and dielectric effects (related to the dielectric mismatch between the dot and the surrounding medium) give rise to shape-dependent correlation effects. The energy needed to add a second electron to the ellipsoidal quantum dot is calculated and discussed as well.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


