Process for synthesizing halogenated derivatives of fluorescein for use in the production of non-volatile memory devices.

A process performs solid phase synthesis of halogenated derivs. of fluorescein, and includes reacting fluorescein with a halide MX, in which M is an alkali metal and X is a halogen, and Oxone (2KHSO5.KHSO4.K2SO4), at a temp. higher than or equal to 150°. A structure uses a halogenated deriv. of fluorescein selected from the group consisting of 2',4',5'-trichlorofluorescein, 2',4',5',7'-tetrachlorofluorescein, 4',5'-diiodofluorescein diacetate and 2',4',5'-triiodofluorescein as electro-bistable material in a nonvolatile memory device.