The authors have performed experiments on current-induced domain wall (DW) displacement in La0.7Sr0.3MnO3 nanostructures patterned by gallium (Ga) focused-ion-beam milling. A dc current is found to assist or hinder, according to polarity, an external magnetic field in the depinning of a DW trapped in a nanoconstriction. For large enough currents, the DW depinning occurs in the absence of external magnetic field. The depinning current depends on the transverse anisotropy constant of the region toward which the DW is displaced.
Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves / Ruotolo, A.; Oropallo, A.; Miletto Granozio, F.; Pepe, G.; Perna, P.; SCOTTI DI UCCIO, Umberto; Pullini, D.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 91:(2007), pp. 132502-132506. [10.1063/1.2784940]
Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves
G. Pepe;SCOTTI DI UCCIO, UMBERTO;
2007
Abstract
The authors have performed experiments on current-induced domain wall (DW) displacement in La0.7Sr0.3MnO3 nanostructures patterned by gallium (Ga) focused-ion-beam milling. A dc current is found to assist or hinder, according to polarity, an external magnetic field in the depinning of a DW trapped in a nanoconstriction. For large enough currents, the DW depinning occurs in the absence of external magnetic field. The depinning current depends on the transverse anisotropy constant of the region toward which the DW is displaced.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
