α-Ga2O3 SBD switching performance in PFC application

This paper presents an in-depth experimental characterization of the switching performance of a state-of-the-art Ga2O3 rectifier used in a real commercial application. Specifically, a Schottky-barrier-diode (SBD) is tested, fabricated with an α-substrate orientation technology, a competitive manufacturing option over the hitherto somewhat more common β orientation. As an application case-study, a boosting power factor correction (PFC) circuit is considered, which allows for the straightforward investigation of the chip operating under varying duty-cycle and load conditions and which corresponds to a potentially large volume market (consumer) application for this technology. A parametric analysis is carried out, by varying the switching frequency, output power and heat-sink temperature of the device. The results indicate that □-Ga2O3 SBDs have the potential to compete with SiC SBDs in the 600 V class, when the performance to cost ratio is taken into account.