The lateral insulated gate bipolar transistor (IGBT) behavior differs in many aspects from the well-studied vertical IGBT. In this paper, the voltage derivative during inductive turnoff for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed in detail. A complete model which accounts for the voltage rise is implemented through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations and experimental results across a wide range of conditions. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turnoff voltage rise in the LIGBT.

Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT / Napoli, Ettore; V., Pathirana; F., Udrea. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 52:12(2005), pp. 2776-2783. [10.1109/TED.2005.859643]

Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT

NAPOLI, ETTORE;
2005

Abstract

The lateral insulated gate bipolar transistor (IGBT) behavior differs in many aspects from the well-studied vertical IGBT. In this paper, the voltage derivative during inductive turnoff for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed in detail. A complete model which accounts for the voltage rise is implemented through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations and experimental results across a wide range of conditions. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turnoff voltage rise in the LIGBT.
2005
Modeling Voltage Derivative During Inductive Turnoff in Thin SOI LIGBT / Napoli, Ettore; V., Pathirana; F., Udrea. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 52:12(2005), pp. 2776-2783. [10.1109/TED.2005.859643]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/204731
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