The dark conductivity and Hall mobility of hydrogenated silicon films deposited varying the silane concentration f=SiH4/(SiH4+H-2) in a conventional plasma enhanced chemical vapor deposition system have been investigated as a function of temperature, taking into account their structural properties. The electrical properties have been studied in terms of a structural two-phase model. A clear transition from the electrical transport governed by a crystalline phase, in the range 1%less than or equal tofless than or equal to3%, to that controlled by an amorphous phase, for f>3%, has been evidenced. Some metastable effects of the dark conductivity have been noticed. (C) 2004 American Institute of Physics.

ELECTRICAL TRANSPORT PROPERTIES OF MICROCRISTALLINE SILICON GROWN BY PECVD / N., Pinto; M., Ficcadenti; L., Morresi; R., Murri; Ambrosone, Giuseppina; Coscia, Ubaldo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 96:(2004), pp. 7306-7311. [10.1063/1.1812818]

ELECTRICAL TRANSPORT PROPERTIES OF MICROCRISTALLINE SILICON GROWN BY PECVD

AMBROSONE, GIUSEPPINA;COSCIA, UBALDO
2004

Abstract

The dark conductivity and Hall mobility of hydrogenated silicon films deposited varying the silane concentration f=SiH4/(SiH4+H-2) in a conventional plasma enhanced chemical vapor deposition system have been investigated as a function of temperature, taking into account their structural properties. The electrical properties have been studied in terms of a structural two-phase model. A clear transition from the electrical transport governed by a crystalline phase, in the range 1%less than or equal tofless than or equal to3%, to that controlled by an amorphous phase, for f>3%, has been evidenced. Some metastable effects of the dark conductivity have been noticed. (C) 2004 American Institute of Physics.
2004
ELECTRICAL TRANSPORT PROPERTIES OF MICROCRISTALLINE SILICON GROWN BY PECVD / N., Pinto; M., Ficcadenti; L., Morresi; R., Murri; Ambrosone, Giuseppina; Coscia, Ubaldo. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 96:(2004), pp. 7306-7311. [10.1063/1.1812818]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11588/202436
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