The aim of this paper is to give an insight and a possible explanation of the limitations in the Reverse Bias Safe Operating Area of 100 V Si Power Schottky Diodes. Starting from experiments and going through device simulations and theory a physical explanation of device failure both in short (i.e. isothermal) and long pulse are explained. With the help of the theoretical analysis an improvement of the design is proposed to increase avalanche capability of these devices and preliminary experimental data are reporting a very promising increase of both the maximum sustainable current in avalanche condition and the maximum sustainable avalanche energy in UIS conditions.
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode / Irace, Andrea; Breglio, Giovanni; Spirito, Paolo; A., Bricconi; D., Raffo; L., Merlin. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 46:(2006), pp. 1784-1789. [10.1016/j.microrel.2006.07.060]
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode
IRACE, ANDREA;BREGLIO, GIOVANNI;SPIRITO, PAOLO;
2006
Abstract
The aim of this paper is to give an insight and a possible explanation of the limitations in the Reverse Bias Safe Operating Area of 100 V Si Power Schottky Diodes. Starting from experiments and going through device simulations and theory a physical explanation of device failure both in short (i.e. isothermal) and long pulse are explained. With the help of the theoretical analysis an improvement of the design is proposed to increase avalanche capability of these devices and preliminary experimental data are reporting a very promising increase of both the maximum sustainable current in avalanche condition and the maximum sustainable avalanche energy in UIS conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
